1 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.052 @ v gs = -4.5v -3.6 0.072 @ v gs = -2.5v -3.1 0.120 @ v gs = -1.8v -2.7 product summary -20 p-channel 20-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature sot-23 surface mount package saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g symbol ratings units v ds -20 v gs 8 t a =25 o c-3.6 t a =70 o c-1.8 i dm -10 i s 0.46 a t a =25 o c1.25 t a =70 o c0.8 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 5 sec 100 steady-state 150 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja
2 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liabi lity arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or spec ifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typical? must be validated for ea ch customer application by customer?s technical experts. apl does not conv ey any license under its patent ri ghts nor the rights of others. apl products are not designed, intended, or authorized for use as components in system s intended for surgical implant into the body, or othe r applications intended to support or sustain life, or fo r any other application in which the failur e of the apl product could create a situat ion where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buye r shall indemnify and hold apl and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the pa rt. apl is an equal opportunity/affirmative action employer. min typ max gate-thres hold voltage v gs(th) v ds = v gs , i d = -250 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -10 a v gs = -4.5 v, i d = -3.6 a 52 v gs = -2.5 v, i d = -3.1 a 72 v gs = -1.8 v, i d = -2.7 a 120 forward tranconductance a g fs v ds = -5 v, i d = -1.25 a 12 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.60 v total gate charge q g 12.0 gate-source charge q gs 2.0 gate-drain charge q gd 2.0 in p ut ca p acitance c iss 1312 out p ut ca p acitance c oss 130 reverse transfer ca p acitance c rss 106 turn-on delay time t d(on) 6.5 ris e time t r 20 turn-off delay time t d(off) 31 fall-time t f 21 drain-source on-resistance a r ds(on) m ? parame te r limits unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -5 v, v gs = -4.5 v, i d = -2.4 a nc p-channel v ds =-15v, v gs =0v, f=1mhz pf specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol
3 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h typical electrical characteristics figure 2. on-resistance variation with drain current and gate voltage figure 1. on-region characteristics figure 4. on-resistance variation with gate to source voltage figure 3. on-resistance variation with temperature figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics
4 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h typical electrical characteristics normalized thermal transien t junction to ambient figure 8. capacitance characteristic figure 7. gate charge characteristic figure 10. single pulse maximum power dissipation figure 9. maximum safe operating area
5 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h package information
6 AM2327P analog power july, 2002 - rev. a preliminary publication order number: ds-am2327_h ordering information ? AM2327P-t1-xx ?a: analog power ? m: mosfet ? 2327: part number ? p: p-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree
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